CMOS温度传感器-从模块设计到系统设计_11页_5mb

CMOS Temperature Sensors: From Module Design to System Design

This article reviews CMOS temperature sensors, categorized by signal processing domains (voltage/current and time/frequency) and design methodologies (module-based for versatility, system-based for performance). Key metrics include accuracy, power consumption, area, and energy efficiency (e.g., resolution figure of merit, FoM).

• Readout-Based Categorization: Voltage/current domain sensors can achieve high accuracy (e.g., ±0.1°C), while time/frequency domain sensors offer compactness and digital friendliness. Examples include PTAT/CTAT circuits and frequency-based oscillators.

• Module Design Methodology: Enhances versatility by dividing the system into separable blocks (analog front-end and readout). Example: A voltage-domain sensor with shared ADC reduces area, achieved accuracies like ±0.38°C (3σ) and FoMs around 3.2 pJ·K².

• System Design Methodology: Co-design of analog front-end and readout improves performance, reducing power and area. Example: Capacitively-biased diode technique enables sub-1V operation, achieving FoM as low as 0.26 pJ·K² with ±0.6°C inaccuracy.

The module design is suitable for general applications, while system design optimizes performance for specific needs. Case studies demonstrate trade-offs between accuracy, energy, and area, with system-based approaches showing superior energy efficiency.

Overall, the methodologies provide structured paths for designing CMOS temperature sensors, with system design offering better integration and efficiency for advanced applications.